 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Si4820DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) 10 8 DD DD SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4820DY SI4820DY-T1 (with Tape and Reel) 8 7 6 5 D D D D N-Channel MOSFET G S SS ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 10 8 50 2.3 2.5 1.6 - 55 to 150 Unit V A W _C Operating Junction and Storage Temperature Range (MOSFET and Schottky) THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient t v 10 sec Steady State RthJA 70 Symbol Typical Maximum 50 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70806 S-03950--Rev. F, 26-May-03 www.vishay.com 2-1 Si4820DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 2.3 A, VGS = 0 V 20 0.0105 0.0155 28 0.74 1.2 0.0135 0.020 S V 1 "100 1 25 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 15 8 45 18 50 VDS = 15 V, VGS = 5.0 V, ID = 10 A 20 8 7 1.6 30 15 90 40 80 ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 70806 S-03950--Rev. F, 26-May-03 Si4820DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 4V 30 20 20 TC = 125_C 10 10 3V 0 0 1 2 3 4 5 25_C - 55_C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 3500 Capacitance C - Capacitance (pF) 0.04 2800 Ciss 0.03 2100 0.02 VGS = 4.5 V VGS = 10 V 1400 Coss 700 Crss 0.01 0.00 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W) (Normalized) VDS = 15 V ID = 10 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 1.4 6 1.2 4 1.0 2 0.8 0 0 8 16 24 32 40 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 70806 S-03950--Rev. F, 26-May-03 www.vishay.com 2-3 Si4820DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 0.06 ID = 10 A 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 0 0.01 Power (W) 60 80 Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 www.vishay.com 2-4 Document Number: 70806 S-03950--Rev. F, 26-May-03 |
Price & Availability of SI4820DY-T1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |